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Determination of aluminum diffusion parameters in silicon

Bestimmung von Diffusionsparametern von Aluminium in Silicium
: Krause, O.; Pichler, P.; Ryssel, H.

Volltext urn:nbn:de:0011-n-103536 (77 KByte PDF)
MD5 Fingerprint: 56605d6daacd005fc4c1f7b0f6e0f751
Erstellt am: 6.2.2015

Journal of applied physics 91 (2002), Nr.9, S.5645-5649
ISSN: 0021-8979
ISSN: 1089-7550
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IIS B ( IISB) ()
diffusion; aluminium; silicium; Prozeßsimulation

Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the fabrication of power semiconductors with p-n junction depths ranging from some microns to more than hundred microns. Although used since long, its diffusion behavior was not sufficiently characterized to support computer-aided design of new devices. In this work, the intrinsic diffusion of aluminum was investigated in the temperature range from 850 to 1290°C. Combining nitridation and oxidation experiments, the fractional diffusivity via self-interstitials was determined. By diffusion in high-concentration boron- and phosphorus-doped silicon the behavior of aluminum under extrisic conditions was investigated.