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Quantum cascade detectors

: Giorgetta, F.R.; Baumann, E.; Graf, M.; Yang, Q.K.; Manz, C.; Köhler, K.; Beere, H.E.; Ritchie, D.A.; Linfield, E.; Davies, A.G.; Fedoryshyn, Y.; Jäckel, H.; Fischer, M.; Faist, J.; Hofstetter, D.


IEEE Journal of Quantum Electronics 45 (2009), Nr.8, S.1039-1052
ISSN: 0018-9197
Fraunhofer IAF ()
III-V Halbleiter; Heterostruktur; optische Spektroskopie; mittleres Infrarot; III-V semiconductor; heterostructure; optical spectroscopy; mid infrared

This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise behavior, reduced thermal load, and simpler readout circuits. This was demonstrated at wavelengths from the near infrared at 2 mum to THz radiation at 87 mum using different semiconductor material systems.