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The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator

: Moutanabbir, O.; Reiche, M.; Erfurth, W.; Naumann, F.; Petzold, M.; Gösele, U.

Preprint urn:nbn:de:0011-n-1017789 (125 KByte PDF)
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Copyright AIP
Erstellt am: 9.3.2011

Preprint urn:nbn:de:0011-n-101778-19 (84 KByte PDF)
MD5 Fingerprint: d3dd90c97367732569441ed639d47680
Erstellt am: 13.11.2013

Applied Physics Letters 94 (2009), Nr.24, Art. 243113, 3 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ( IMWS) ()

The strain behavior in nanoscale patterned biaxial tensile strained Si layer on insulator is investigated in 60-nm-thick nanostructures with dimensions in the 80-400 nm range. The in-plane strain is evaluated by using UV micro-Raman. We found that less than 30% of the biaxial strain is maintained in the 200x200 nm(2) nanostructures. This relaxation, due to the formation of free surfaces, becomes more important in smaller nanostructures. The strain is completely relieved at 80 nm. This phenomenon is described based on detailed three-dimensional finite element simulations. The anisotropic relaxation in rectangular nanostructures is also discussed.