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1999
Journal Article
Titel
Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing
Abstract
By using a scanning infrared polariscope (SIRP), the residual strain was characterized in semi-insulating wafers of slightly Fe-doped InP crystals treated by multiple-step wafer annealing (MWA). The SIRP maps of annealed wafers were compared with those of the as-grown adjacent wafers. It was revealed that the optimized MWA process did not generate an addtional, unwanted residual strain but homogenized its distribution.