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Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers

Modellierung des elektro-optisch-thermischen Verhaltens von (AlGaIn)(AsSb) Diodenlasern mit Wellenlänge von 2.0 µm
: Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.


Applied Physics Letters 80 (2002), Nr.22, S.4085-4087
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
diode laser; Diodenlaser; infrared laser; Infrarot-Laser; high power; hohe Leistung; GaInAsSb; AlGaAsSb; GaSb; thermal resistance; thermischer Widerstand; simulation; power efficiency; Leistungseffizienz

Strained triple-quantum-well, large-optical-cavity GaInSb/AlGaAsSb/GaSb diode lasers emitting at 1.98 mum at 300 K are investigated with regard to their high-power capability. As the heating of the active region is a limiting factor for these devices, a quantitative model is derived to simulate the performance of these lasers including thermal effects. The standard laser parameters, deduced from measurements on ridge waveguide lasers, and the measured thermal resistance of the mounted devices were then taken as input parameters. The output power and power efficiency of the lasers calculated using the presented model. Good agreement was found between calculated data and the measurements for different heatsink temperatures as well as for different laser geometries and mounting techniques. The maximum output power achieved for p-side down mounted 1000 X 150 mum2 broad-area laser was 1.7 W at 300 K in cw operation.