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Correlation of spatially resolved lifetime measurements with overall solar cell parameters

: Isenberg, J.; Dicker, J.; Riepe, S.; Ballif, C.; Peters, S.; Lautenschlager, H.; Schindler, R.; Warta, W.

Volltext urn:nbn:de:0011-b-825749 (121 KByte PDF)
MD5 Fingerprint: 374062dcb7437899ed23f7af5dbd31fe
Erstellt am: 26.10.2012

IEEE Electron Devices Society:
29th IEEE Photovoltaic Specialists Conference 2002. Proceedings : May 20-24, 2002 Hyatt Regency New Orleans New Orleans, Louisiana
New York, NY: IEEE, 2002
ISBN: 0-7803-7471-1
Photovoltaic Specialists Conference <29, 2002, New Orleans/La.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Lifetime mappings are common tools for assessing the quality of mc-silicon for solar cell production. Nevertheless it is a difficult problem to directly relate lifetime mappings to overall solar cell parameters. This paper intends to show that this correlation is possible quantitatively. We have correlated actual low-level injection lifetimes obtained by carrier density imaging (CDI) measurements with overall cell parameters of solar cells processed on adjacent wafers. The 2D lifetime-structure is taken account for by appropriate weighing functions that include the whole information given in the frequency distribution of bulk lifetimes. Thus a one dimensional cell model (PC1D) can be applied. Good general agreement between predicted and measured cell parameters has been achieved, deviations are discussed. Further insight into the gettering behavior of block-east and Bridgman-grown mc-silicon was attained.