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Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: A comparison of different concepts


Dobisz, E.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Emerging Lithographic Technologies IV.
Bellingham: SPIE, 2000 (SPIE Proceedings Series 3997)
ISBN: 0-8194-3615-1
Emerging Lithographic Technologies Conference <4, 2000, Santa Clara/Calif.>
Fraunhofer ILT ()

Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiation power of about 40 W to fulfill the prerequisites for an economical wafer throughput up to 80 wafer/hour with a wafer size of 300 mm in diameter. Laser produced plasmas and gas discharge based plasmas are under investigation by several working groups as EUV-sources for this purpose. In this paper the achieved results for the different sources are discussed regarding their emission characteristics in comparison to the demands of EUV lithography (EUVL).