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Microstructuring of SiC by laser ablation with pulse duration from ns to fs range (LAMP2002)

: Kreutz, E.W.; Weichenhain, R.; Wagner, R.; Horn, A.

RIKEN review (2003), Nr.50, S.83-86
ISSN: 0919-3405
Fraunhofer ILT ()

The precision machining of silicon carbide (SiC) by short pulse (ns, ps) laser radiation has been investigated at different fluence and wavelength (355 nm, 532 nm, 1064 nm) to determine the modification of application related material properties in the surrounding of the processed microstructures. The threshold fluences for removal with ps laser radiation are in the range 0.14 to 1.5 J/cm2 depending on the wavelength. In the case of ns laser radiation the threshold fluences are about one order of magnitude higher. The modified areas are investigated by EDX, AES, SAM, Raman spectroscopy, and nanoindentation. The results are related to processing in the fs regime.