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Three-dimensional triangle-based simulation of etching processes

Dreidimensionale dreiecksbasierte Simulation von Ätzprozessen
 
: Lenhart, O.; Bär, E.

:

Japan Society of Applied Physics -JSAP-:
Simulation of Semiconductor Processes and Devices. SISPAD 2002 : September 4-6, 2002. Proceedings
Piscataway, NJ: IEEE, 2002
ISBN: 4-89114-027-5
S.127-130
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <7, 2002, Kobe>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
process simulation; etching; 3D string algorithm; surface meshing; Prozeßsimulation; Ätzen; 3D-String-Algorithmus; Oberflächengitter

Abstract
A software module for the three-dimensional simulation of etching processes has been developed. It works on multilayer structures given as triangulated surface meshes. The mesh is moved nodewise according to rates which in this work have been determined from isotropic and anisotropic components. An important feature of the algorithm is the automatic detection of triple lines along mask edges and the refinement of triangles at these triple lines. This allows for the simulation of underetching. The capabilities of the algorithm are demonstrated by examples such as the simulation of glass etching for the fabrication of a phase shift mask for optical lithography and the etching of an STI trench structure.

: http://publica.fraunhofer.de/dokumente/B-73850.html