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Power efficiency of GaSb based 2.0 µm diode lasers

Leistungseffizienz GaSb-basierenden Diodenlasern mit einer Wellenlänge von 2.0 µm
: Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J.


IEEE Lasers and Electro-Optics Society:
LEOS 2001. The 14th Annual Meeting of the IEEE Lasers & Electro-Optics Society. Vol.2 : Hyatt Regency La Jolla, San Diego, CA. 2001 IEEE/LEOS annual meeting conference proceedings
Piscataway, NJ: IEEE, 2001
ISBN: 0-7803-7105-4
ISBN: 0-7803-7106-2
IEEE Lasers and Electro-Optics Society (Annual Meeting) <14, 2001, San Diego/Calif.>
Fraunhofer IAF ()
diode laser; Diodenlaser; infrared laser; Infrarot-Laser; GaInAsSb; AlGaAsSb; GaSb; high power; hohe Leistung; power efficiency; Leistungseffizienz; thermal model; thermisches Modell; broad-area laser; Breitbandstreifenlaser

A model was developed to describe the power efficiency of ridge waveguide lasers as a function of intrinsic laser parameters. Molecular beam epitaxy was used to fabricate the samples for quantum well (QW) diode lasers. The laser facets were high-reflection/anti-reflection coated and were mounted p-side down to improve heat sinking. Thermal resistance was found to decrease from 73K/W to 8K/W for the device with p-side down mounting.