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MOCVD of ferroelectric thin films

: Schmidt, C.; Lehnert, W.; Leistner, T.; Frey, L.; Ryssel, H.

Journal de physique. 4, Colloque 9 (1999), Nr.8, S.575-582
ISSN: 1155-4339
European Conference on Chemical Vapour Deposition <12, 1999, Barcelona>
Fraunhofer IIS B ( IISB) ()
absorption coefficients; atomic force microscope; dielectric polarisation; ellipsometry; ferroelectric thin film; Lead compounds; MOCVD; MOCVD coatings; refractive index; surface structure

Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titanate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up to 150 mm using liquid metal organic precursors including a novel zirconium precursor. Film thickness ranged from 10 nm to 700 nm. The films were characterized regarding their electrical, optical, and structural properties depending on film composition and deposition conditions. In this paper, we report our results regarding composition effects, the electrical polarization behavior and optical properties like refractive indices and absorption coefficient, which were investigated by spectroscopic ellipsometry for a wide wavelength range. Furthermore some temperature dependent effects of the platinum electrodes are described.