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Impurity incorporation during beam assisted processing analyzed using nuclear microprobe

: Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H.


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 158 (1999), Nr.1-4, S.487-492
ISSN: 0168-583X
International Conference on Nuclear Microprobe Technology and Applications <6, 1998, Cape Town/South Africa>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
electron beam effects; focused ion beam technology; impurities; impurity distribution; ion beam assisted deposition; ion beam effects; ion microprobe analysis; Rutherford backscattering; sputter etching

Impurity incorporation due to localized beam processing by focused ion beams (FIBs) and electron beams (EBs) such as physical sputtering, gas-assisted etching (GAE) using iodine gas and beam-assisted deposition using (CH3)3CH3C5H9Pt precursor gas has been investigated by a medium energy nuclear microprobe. RBS mapping on incorporated impurities has been performed using 300 keV Be2+ beams with a beam spot size of 80 nm. RBS mapping images for physically sputtered and GAE areas indicate the localized Ga and I atoms distributions from the Ga FIB and from the etchant gas, respectively. The amount of Ga in the GAE area was estimated to be 2.7 times smaller than that in the physically sputtered area. RBS mapping images for FIB assisted Pt deposited areas revealed that Pt and Ga atoms were distributed in the processed areas, while C atoms resided beyond the processed areas.