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Oxygen distribution in silicon melt during standard Czochralski Process studied by sensor measurements and comparison to numerical simulation

Untersuchung der Sauerstoff-Verteilung in Silicium-Schmelze während eines Standard-Czochralski-Prozesses mittels Sensormessungen und Vergleich mit numerischer Simulation


Journal of Crystal Growth 198/199 (1999), Nr.1, S.409 ff
ISSN: 0022-0248
Fraunhofer IIS B ( IISB) ()
silicium; Czochralski; Sauerstoffmessung; Transportmodellierung

The distribution of oxygen in silicon melts kept in a 14" diameter silica crucible of a standard Czochralski puller was measured using an electrochemical oxygen-sensor. Three different situations were analyzed without presence of a crystal and with 4" diameter crystals being pulled at crucible rotation rates of 2 and 5 rpm. The experimental results are discussed within the frame of existing modelling results in the literature and own simulations. It is found that boundary conditions and models which are presently proposed in the literature are obviously not adequate to provide quantitative correlation with experimental data.