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Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy

: Gerard, B.; Marcadet, X.; Etienne, P.; Pribat, D.; Friedrich, D.; Eichholz, J.; Bernt, H.; Carlin, J.-F.; Ilegems, M.

Ringel, S.A. ; Materials Research Society -MRS-:
III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics
Warrendale, Pa.: MRS, 1999 (Materials Research Society symposia proceedings 535)
ISBN: 1-558-99441-6
Symposium D "Integration of Dissimilar Materials in Micro- and Optoelectronics" <1998, Boston/Mass>
Symposium I "III-V and SiGe Group IV Device/IC Processing Challenges for Commerical Applications" <1998, Boston/Mass.>
Materials Research Society (Fall Meeting) <1998, Boston/Mass.>
Fraunhofer ISIT ()
CMOS integrated circuits; dislocation density; driver circuits; electro-optical effects; elemental semiconductors; gallium arsenide; III-V semiconductors; integrated optoelectronics; light emitting diode; micro optics; molecular beam epitaxial growth; semiconductor growth; silicon; vapour phase epitaxial growth

Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on silicon. In this technique, the growth of the III-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V seed, the vertical growth being stopped by an overhanging capping layer. As an example, conformal GaAs layers on silicon, presenting dislocation densities below 105 cm-2, have been obtained using selective vapor phase epitaxy. These layers have then been used as high quality GaAs on Si substrates for subsequent vertical MBE regrowth of active structures. In this paper, we report on the integration of surface-emitting microcavity LEDs with their silicon drivers using this conformal growth technique. The global technology concept and the design of the active structures are first presented. The compatibility of the conformal growth technique with CMOS technology is then checked: the impact of the integration process on the performances of the drivers is for example quantified. Characterisations of the high crystalline quality of the conformal layers and of the LEDs structures grown on it are then shown. The electro-optical characteristics of the LEDs on Si are finally compared to those of reference LEDs on GaAs substrates in order to prove the efficiency of the integration procedure.