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On the influence of boron-interstitial complexes on transient enhanced diffusion

Über den Einfluß von Bor-Eigenzwischengitteratomkomplexen auf die transient erhöhte Diffusion
: Stiebel, D.; Pichler, P.; Ryssel, H.

Gossmann, H.-J.L. ; Materials Research Society -MRS-:
Si front-end processing. Physics and technology of dopant-defect interactions
Warrendale, Pa.: MRS, 1999 (Materials Research Society symposia proceedings 568)
ISBN: 1-558-99475-0
Materials Research Society (Spring Meeting) <1999, San Francisco/Calif.>
Fraunhofer IIS B ( IISB) ()
Bor; BIC; Ionenimplantation; beschleunigte Diffusion

We present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the absence of {311}-defects. Under these conditions, TED is mainly determined by the formation of boron-interstitial complexes (BIC). In addition, effects from the proximity of the surface become more and more important. Insight into the behavior of the dopant atoms is obtained by the comparison with simulations.