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Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N

Resonante Ramansteuerung als selektive Sonde für Inhomogenitäten in der Zusammensetzung von (InGa)N mit geringem In Gehalt
 

Gershoni, D.:
24th International Conference on the Physics of Semiconductors 1998. Proceedings
Singapore: World Scientific, 1999
ISBN: 981-02-3613-1
4 S. : Ill., Lit.
International Conference on the Physics of Semiconductors <24, 1998, Jerusalem>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
group III-nitrides; Gruppe III-Nitride; InGaN; compositional fluctuation; raman spectroscopy; Kompositionsfluktuation; Ramanspektroskopie

Abstract
Raman spectroscopy has been used to study compositional inhomogeneity in MOCVD grown In(x)Ga(1-x)N with x about 0.1, taking advantage of the selective enhancement of Raman scattering by the A1 (LO) phonon from regions with different alloy composition. A clear high- frequency shift of the A1(LO) mode relative to the E2 mode is observed, when the experimental conditions are varied from excitation below the fundamental energy gap of the (InGa)N to above band gap excitation. This frequency shift is taken as direct evidence for compositional inhomogeneity, which results in localised regions with different In content, and thus different gap energies and A1(LO) phonon frequencies.

: http://publica.fraunhofer.de/dokumente/B-11500.html