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Direct observation of the rotational direction of electron spin precession in semiconductors

Direkte Beobachtung der Rotationsrichtung der Elektronenspin Präzession in Halbleitern
: Oestreich, M.; Hägele, D.; Schneider, H.C.; Knorr, A.; Hansch, A.; Hallstein, S.; Schmidt, K.H.; Köhler, K.; Koch, S.W.; Rühle, W.W.


Solid State Communications 108 (1998), No.10, pp.753-758 : Ill., Lit.
ISSN: 0038-1098
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; photoluminescence; Photolumineszenz; quantum wells

A new experimental method is presented to determine the sign of the electron Land' g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.