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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Direct observation of the rotational direction of electron spin precession in semiconductors

Direkte Beobachtung der Rotationsrichtung der Elektronenspin Präzession in Halbleitern

: Oestreich, M.; Hägele, D.; Schneider, H.C.; Knorr, A.; Hansch, A.; Hallstein, S.; Schmidt, K.H.; Köhler, K.; Koch, S.W.; Rühle, W.W.

DOI: 10.1016/S0038-1098(98)00440-2

	Solid State Communications 108 (1998), No.10, pp.753-758 : Ill., Lit. ISSN: 0038-1098

	English
	Journal Article
	Fraunhofer IAF ()
	III-V Halbleiter; III-V semiconductor; photoluminescence; Photolumineszenz; quantum wells

Abstract
A new experimental method is presented to determine the sign of the electron Land' g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.