Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Direct extraction of all four transistor noise parameters from a single noise figure measurement

Bestimmung aller vier Rauschparameter aus einer einzelnen Rauschzahlmessung


22nd European Microwave Conference '92. Proceedings
Tunbridge Wells: Microwave Exhibitions and Publishers, 1992
pp.157-162 : Abb.,Tab.,Lit.
European Microwave Conference (EuMC) <22, 1992, Espoo>
Conference Paper
Fraunhofer IAF ()
FET noise modeling; FET-Rauschmodell; MODFET noise modeling; MODFET-Rauschmodell; noise parameter measurement; Rauschparameter

A measurement and analysis technique has been developed that allo for, after s-parameter measurements, direct extraction of allow four transistor noise parameters from a single noise figure measurement. A simple 50 omega noise source measurement system can thus be used for noise parameter extraction, simplifying considerably the measurement of noise parameters and so enabling fully automated high frequency testing and wafer mapping measurement systems to provide both s-parameters and noise parameters.