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Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects

 
: Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.

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Fulltext urn:nbn:de:0011-px-99487 (239 KByte PDF)
MD5 Fingerprint: 106c871795b108480d983bd01185c1ef
Copyright AIP
Created on: 7.2.2015


Applied Physics Letters 60 (1992), No.8, pp.953-955
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article, Electronic Publication
Fraunhofer IIS B ( IISB) ()

Abstract
Boron was implanted into silicon at a wafer temperature of 950degreeC. The resulting boron profile showed a marked uphill diffusion at the surface and a very high diffusion enhancement. Initially homogeneously distributed antimony atoms showed remarkable redistribution effects after the implantation. These experiments allow the validation of diffusion theories, including the effects of point defect gradients on the migration of dopants. It will be shown that the experimental results agree well with the predictions of pair diffusion theories.

: http://publica.fraunhofer.de/documents/PX-9948.html