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  4. Diodenlaser-Oszillator oder- Verstaerker mit wenigstens einer lichtleitenden Halbleiterschicht
 
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Patent
Title

Diodenlaser-Oszillator oder- Verstaerker mit wenigstens einer lichtleitenden Halbleiterschicht

Other Title
Laser diode oscillator or amplifier - has conducting layer with greater refractive index than that of encapsulated semiconductor material with symmetric region formed having zero percent aluminium content.
Abstract
The laser diode oscillator has an InAlGaAs structure with the aluminium structure formed on top on a GaAs substrate. The conducting semiconductor layer (LH) has a thickness of one micron on both sides. This provides a refractive index that is greater than that of the semiconductor material that is covered. A symmetric region (1) is formed that has a zero percent aluminium content and is within a quantum wave structure (2). USE - Solid state laser systems for material processing, eg cutting, welding or medical applications. ADVANTAGE - Improved beam quality for high power.
Inventor(s)
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Chazan, P.
Link to Espacenet
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=19717571A
Patent Number
1997-19717571
Publication Date
1998
Language
German
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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