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Title
Digitale Gatterschaltung mit herabgesetztem Querstrom
Date Issued
2003
Author(s)
Eichholz, J.
Quenzer, H.J.
Staudt-Fischbach, P.
Patent No
1997-19718369
Abstract
The output signal of the gate circuit gate stage is substantially a binary signal with sharp, at least steep flank/transition and can be tapped at a junction point of two series-connected MOSFETs with both its binary values. The threshold voltages from a P- and an N-channel MOSFET so overlap that the drain-source paths of the MOSFET, coupled at the junction point are not simultaneously low-ohmic - at ideal switching of the transistors. Preferably the MOSFETs have differently doped channels. Typically at least one transistor, near the low potential, is of the N-channel type. The sum of the threshold voltages may be more than 2V, and the overlap may be up to several volts. USE - For digital circuits. ADVANTAGE - Allows free selection of the threshold voltage of individual transistors.
Language
de
Patenprio
DE 1997-19718369 A1: 19970502