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  4. Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
 
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1994
Conference Paper
Title

Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4

Author(s)
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schweizer, T.
Ganser, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hiesinger, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rothemund, W.
Mainwork
Gallium arsenide and related compounds 1993. Proceedings  
Conference
International Symposium on Gallium Arsenide and Related Compounds 1993  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electrical property

  • elektrische Eigenschaft

  • heterostructure

  • Heterostruktur

  • III-V Halbleiter

  • III-V semiconductors

  • pseudomorphes Wachstum

  • pseudomorphic growth

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