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Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4


Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
Conference Paper
Fraunhofer IAF ()
electrical property; elektrische Eigenschaft; heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; pseudomorphes Wachstum; pseudomorphic growth