• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Dielectric materials and insulators for microelectronics
 
  • Details
  • Full
Options
1997
Conference Paper
Title

Dielectric materials and insulators for microelectronics

Abstract
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintains its specific electrical, physical, and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mu m one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In this article we survey currently used dielectric materials and future trends for microelectronic applications.
Author(s)
Treichel, H.
Ruhl, G.
Wurl, R.
Ansmann, P.
Müller, O.
Mainwork
Chemical vapor deposition. Proceedings of the fourteenth international conference and EUROCVD-11  
Conference
International Conference on Chemical Vapor Deposition (CVD) 1997  
EUROCVD 1997  
Electrochemical Society (Meeting) 1997  
Language
English
IFT  
Keyword(s)
  • dielectric materials

  • insulating materials

  • integrated circuit interconnections

  • permittivity

  • ULSI

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024