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Di-Carbon defects in annealed highly carbon doped GaAs

Di-Kohlenstoff-Defekte in ausgeheiltem hochkohlenstoffdotiertem GaAs


Physical review letters 78 (1997), No.1, pp.74-77
ISSN: 0031-9007
Journal Article
Fraunhofer IAF ()
carbon doping; GaAs; Kohlenstoffdotierung; raman spectroscopy; Ramanspektroskopie

Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm(exp -1) in GaAs codoped with 12C and 13C after annealing at 850 deg C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs, acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm(exp -1) from a different C-C complex.