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  4. Development and simulation of a silicon-based pressure sensor with digital output
 
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1990
Conference Paper
Title

Development and simulation of a silicon-based pressure sensor with digital output

Abstract
A silicon-based pressure sensor with digital output has been developed by combining a piezoresistive pressure transducer, a CMOS circuit and a chip containing thin-film poly silicon trimming resistors. Digitalization of the transducer's analogue output signal is achieved by connecting it as input to a double-CMOS-inverter cascade with a poly silicon trimming resistor connected to the first inverter's source. Adjustment of the cascade's detection threshold is performed by laser-trimming of this resistor. Four of these digitizing circuits with different threshold voltages were connected in parallel. Simulation of the developed sensor has been performed with SPICE after implementing a novel simulation technique for piezoresistors. These were modelled by separating the temperature and pressure dependences into independent factors and constructing an equivalent into a SPICE netlist.
Author(s)
Anton, J.
Steger, U.
Dominguez, C.
Samitier, J.
Sandmaier, H.
Mainwork
Micromechanics Europe 1990. Technical Digest  
Conference
Workshop on Micromachining, Micromembranes and Microsystems 2  
Language
English
IFT  
Keyword(s)
  • CMOS-inverter

  • integration

  • piezoresistive effect

  • pressure sensor

  • simulation

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