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1994
Journal Article
Titel
Determination of the GaN/AlN band offset via the -/0 acceptor level of iron
Alternative
Bestimmung der GaN/AlN Banddiskontinuität mittels des -/0 Akzeptorniveaus von Eisen
Abstract
A characteristic infrared luminescence spectrum, dominated by a zero-phonon line at 1.30 eV, has been observed on AlN polycrystalline material. It is assigned to the spin-forbidden internal 3d-3d transition high4 T sub1 (G) to high6 A sub1 (S) of Fe high3plus/subAl (3d high5). By photoluminescence excitation spectroscopy the (-/0) acceptor level of iron in AlN could be located at E subV plus 3.0 eV. The corresponding value for iron in GaN is E subV plus 2.5 eV. From these values, the valence-band offset in AlN/GaN heterojunction is predicted as DeltaE subV equal 0.5 eV, the conduction-band offset as DeltaE subC equal 2.3 eV
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