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  4. Determination of the FR3 acceptor level by direct excitation of the FR3 EPR in undoped semiinsulating GaAs.
 
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1989
Journal Article
Title

Determination of the FR3 acceptor level by direct excitation of the FR3 EPR in undoped semiinsulating GaAs.

Other Title
Bestimmung des FR3 Akzeptorniveaus durch direkte Anregung der FR3 EPR in undotiertem semiisolierendem GaAs
Abstract
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered. It results from the excitation of an electron from the FR3 acceptor level to the conduction band. The spectral shape of the band has been measured by the initial slope technique. Its low energy threshold is at 1.44 eV from which we deduce an acceptor binding energy of (80 plus minus 10) meV. Nonmonotonic FR3 EPR transients are observed within this band. This unusual effect is, however, not related to the metastable properties of the AsGa/EL2 defect.
Author(s)
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mooney, P.M.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Materials Science Forum  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • ESR

  • FR3 Akzeptor

  • GaAs

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