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Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1

Bestimmung der Bindungsverhältnisse des Kohlenstoffakzeptors in InxGa1-xAs mit x kleiner als 0.1
: Pritchard, R.E.; Newman, R.C.; Wagner, J.; Maier, M.; Mazuelas, A.; Lane, P.A.; Martin, T.; Whitehouse, C.R.; Ploog, K.


Applied Physics Letters 66 (1995), No.20, pp.2676-2678 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
carbon doping; InxGa1-xAs; Kohlenstoffdotierung; local vibrational modes; lokale Schwingungsmoden

The local environment of CdeepAs acceptors in IndeepxGadeep1-deepxAs has been determined from the localized vibrational modes (LVMs) of both isolated CdeepAs impurities and H-CdeepAs pairs using infrared (IR) absorption and Raman scattering techniques. In as-grown layers, a single LVM due to CdeepAs was observed which broadened and shifted to lower energies with increasing x. The introduction of hydrogen led to the formation of H-Cdeep As pairs and a single antisymmetric A1high- mode (stretch) and a single symmetric A1high+ mode (xhighH) were observed for all samples. All the LVMs were identified with carbon in CdeepAsGadeep4 cluster configurations implying that less than 5% of the detectable carbon atoms are present in clusters incorporating one or more CdeepAs-In bonds.