Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Determination of EBIC response by two-dimensional device simulation

: Erlebach, A.; Stephan, R.; Dallmann, G.

Baccarani, G.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.:
Simulation of semiconductor devises and processes : Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93), held at the Technical University of Vienna, Austria, September 7 - 9, 1993
Wien: Springer, 1993 (Simulation of semiconductor devices and processes 5)
ISBN: 0-387-82504-5
ISBN: 3-211-82504-5
International Conference on Simulation of Semiconductor Devices and Processes (SISDEP) <5, 1993, Vienna>
Conference Paper
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
Dotierungsprofil; EBIC; Halbleitertechnologie; Meßverfahren; Mikroelektronik; Modellsimulation; Simulationsprogramm

An extension of the two-dimensional device simulation of small-geometry semiconductor devices is described. The EBIC response is determined by means of device simulation. An important improvement of the determination of lateral dopant distribution in VLSI structures is obtained by combining of simulation and measurement. For calculation of EBIC signal the generation of electrons and holes due to the electron radiation must be modelled. The entire system of semiconductor equations which consists of Poisson equation, transport equations and continuity equations including the electron beam induced generation rate is solved. The corresponding current (EBIC signal) caused by the separation of the generated electron-hole pairs in regions of high electric field strength and the following drift and diffusion to the contacts can be calculated for any structural and electrical conditions. The results of the combination of simulation and EBIC measurement is shown for VLSI transistors.