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Determination of band-edge offset by weak field hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl

Bandsprünge von PbSe/PbEuSe MBE-Multiquantentrögen auf KCl aus Messung des Halleffekt in Schwachen Feldern

	Solid-State Electronics 37 (1994), No.4-6, pp.1113-1116 : Abb.,Tab.,Lit. ISSN: 0038-1101

	English
	Journal Article
	Fraunhofer IPM ()
	Halbleiter; heterojunction; Heterostruktur; semiconductor

Abstract
Weak field hall effect measurements between 34 and 300 K were applied to three PbSe/PbEuSe (Eg(PbEuSe) = 440 meV at 300 K) MQW samples on KCl. By calculating the quasi-Fermi energy levels the temperature dependent band-edge offsets were determined. The valence band offset Delta E gamma was found to be 65 meV at 34 K with a positive temperature coefficient of 0.68 meV/K. Thus Delta E gamma = 43 + 0.68 T(meV) is suggested.

: http://publica.fraunhofer.de/documents/PX-9412.html