• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Determination of band-edge offset by weak field hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl
 
  • Details
  • Full
Options
1994
Journal Article
Title

Determination of band-edge offset by weak field hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl

Other Title
Bandsprünge von PbSe/PbEuSe MBE-Multiquantentrögen auf KCl aus Messung des Halleffekt in Schwachen Feldern
Abstract
Weak field hall effect measurements between 34 and 300 K were applied to three PbSe/PbEuSe (Eg(PbEuSe) = 440 meV at 300 K) MQW samples on KCl. By calculating the quasi-Fermi energy levels the temperature dependent band-edge offsets were determined. The valence band offset Delta E gamma was found to be 65 meV at 34 K with a positive temperature coefficient of 0.68 meV/K. Thus Delta E gamma = 43 + 0.68 T(meV) is suggested.
Author(s)
Shi, Z.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Lambrecht, A.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Solid-State Electronics  
DOI
10.1016/0038-1101(94)90367-0
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • Halbleiter

  • heterojunction

  • Heterostruktur

  • semiconductor

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024