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Depth profile analysis of hydrogenated carbon layers on silicon and germanium by XPS, AES and SIMS

Tiefenprofil-Analyse von wasserstoffhaltigen Kohlenstoffilmen auf Silizium und Germanium mittels XPS, AES und SIMS
: Sander, P.; Wiedmann, L.; Benninghoven, A.; Sah, R.E.

E-MRS Spring Meeting 1987. Proceedings. Vol.XVII
Paris: Les Editions de Physique, 1987
pp.305-311 : Abb.,Lit.
European Materials Research Society (Spring Meeting) <1987, Strasbourg>
Conference Paper
Fraunhofer IAF ()
AES; Kohlenstoffilm; SIMS; Tiefenprofil; XPS

Depth profiles of a-C:H layers on Si and Ge have been analyzed by XPS, AES and SIMS. The distribution of interfacial carbide and of impurities and their influence on film adhesion are discussed.