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Deposition of TiN using tetrakis/dimethylamindo/-titanium in an electron-cyclotron-resonance plasma process

: Weber, A.; Nikulkski, R.; Klages, C.-P.


Applied Physics Letters 63 (1993), No.3, pp.325-327
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer IST ()
diffusion barrier; Diffusionsbarriere; ECR plasma; MOPECVD; titaniumnitride; Titannitrid

High quality TiN layers were deposited in an electron cyclotron resonance (ECR) plasma process at substrate temperatures between 350 and 600 degree C. Tetrakis(dimethylamido)-titanium (Ti(NMesub2)sub4) was used as precursor and introduced into the downstream region of an ECR nitrogen plasma. The electrical properties of the gold-colored TiN layers (45-100myOmegacm) depend on the deposition rate, the substrate temperature, the MW power, and the plasma gas composition. TiN with a resistivity of 45 myOmegacm could be obtained at a substrate temperature of 600 degree C and a MW power of 400 W. The measured resistivities are so far the best reported values obtained by using a metalorganic precursor for TiN deposition. The deposits were characterized by resistivity measurements and EPMA for chemical analysis. The morphology and step coverage was checked by AFM and SEM.