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Deposition of high quality TiN using tetra-iso-propoxide titanium in an electron cyclotron resonance plasma process

: Weber, A.; Pöckelmann, R.; Klages, C.-P.


Applied Physics Letters 67 (1995), No.20, pp.2934-2935
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IST ()
diffusion barrier; ECR plasma; PECVD; tetra-isopropoxide titanium; TiN; titanium nitride; VLSI

High-quality TiN films were deposited in an electron cyclotron resonance (ECR) plasma process at low substrate temperatures between 100 and 450 deg C using tetraisopropoxide titanium (TIPT) (Ti[OCH(CH3)2]4) as precursor. TIPT was introduced into the downstream region of an ECR nitrogen or ammonia plasma. The eletrical properties of the gold colored TiN layers (100-400 micro ohm cm) depend on the deposition rate and the substrate temperature. Despite the use of an oxygen containing titanium precursor the oxygen content in the TiN was found to be >2 at per cent. The measured resistivities and the purity of the TiN films indicate a selective cleavage of the isopropoxide ligand in the ECR downstream plasma. The films were characterized by resistivity measurements and secondary ion mass spectrometry.