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Dependence of surface recombination velocities at silicon solar cell surfaces on incident light intensity

: Knobloch, J.; Aberle, A.G.; Warta, W.; Voss, B.

Eighth E.C. Photovoltaic Solar Energy Conference '88. International Conference. Bd.II. Proceedings
Dordrecht: Kluwer Academic Publishers Group, 1988
ISBN: 90-277-2816-X
Photovoltaic Solar Energy Conference <8, 1988, Florenz>
Conference Paper
Fraunhofer ISE ()

We present measurements of surface recombination velocities at Si02-passivated silicon solar cells, demonstrating a strong dependence on incident light intensity even in the low-level region. This phenomenon can be described by standard Shockley-Read-Hall-Theory (SRH). The different dependence for p-type and n-type material can be explained by different capture cross sections for electrons and holes. (ISE)