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1988
Conference Paper
Titel
Dependence of surface recombination velocities at silicon solar cell surfaces on incident light intensity
Abstract
We present measurements of surface recombination velocities at Si02-passivated silicon solar cells, demonstrating a strong dependence on incident light intensity even in the low-level region. This phenomenon can be described by standard Shockley-Read-Hall-Theory (SRH). The different dependence for p-type and n-type material can be explained by different capture cross sections for electrons and holes. (ISE)