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Dependence of lead chalcogenide diode laser radiation on lattice misfit induced stress

Abhängigkeit der Frequenz der Laseremission vom Gitterfehlanpassungsstreß bei Bleichalkogenidlasern
 
: Böttner, H.; Schießl, U.; Tacke, M.; Schiessl, U.

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Superlattices and Microstructures 7 (1990), No.2, pp.97-102
ISSN: 0749-6036
English
Journal Article
Fraunhofer IPM ()
Bleichalkogenid; diode laser; Diodenlaser; Gitterfehlanpassung; laser radiation; Laserstrahlung; lead chalcogenide; misfitstress

Abstract
Lead chalcogenide diode lasers were fabricated with PbSe as active layer and different confinement layers consisting of PbS, (PbEu)Se and (PbSr)Se. For PbS confinement layers a red shift in the emission frequency was found, for the other confinement layer types a blue shift was observed. These shifts can be explained by lattice misfit induced strain.

: http://publica.fraunhofer.de/documents/PX-9206.html