1994
Conference Paper
Title

DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping

Other Title
Gleichstrom- und Hochfrequenzeigenschaften von In0.35Ga0.65As/GaAs-MQW-Laserdioden mit verspannten Schichten und p-Dotierung
Abstract
An experimental and modelling investigation concerning the effects of p-doping on the DC and high-frequency properties of MBE grown In sub 0.35 Ga sub 0.65 As/GaAs strained-layer MQW lasers is presented. P-doping produces a substantial decrease in the non-linear gain coefficient, which can be attributed to a doping-induced decrease in the intraband relaxation time, and a small increase in the differential gain. The factors limiting the maximum measured modulation bandwidth of the p-doped devices (30 GHz) are analyzed and discussed.
Author(s)
Esquivias, I.
Weisser, S.
Schönfelder, A.
Ralston, J.D.
Tasker, P.J.
Larkins, E.C.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Benz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rosenzweig, Josef  
Mainwork
Conference
Language
English
Keyword(s)