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DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping

Gleichstrom- und Hochfrequenzeigenschaften von In0.35Ga0.65As/GaAs-MQW-Laserdioden mit verspannten Schichten und p-Dotierung

: Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J.

	Rupprecht, H.S.; Weimann, G.: Gallium arsenide and related compounds 1993. Proceedings Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136) ISBN: 0-7503-0295-X pp.265-270
	International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>

	English
	Conference Paper
	Fraunhofer IAF ()
	InGaAs/GaAs; MQW laser diode; MQW Laserdiode; p-doping; p-Dotierung; strained layer; verspannte Schicht

Abstract
An experimental and modelling investigation concerning the effects of p-doping on the DC and high-frequency properties of MBE grown In sub 0.35 Ga sub 0.65 As/GaAs strained-layer MQW lasers is presented. P-doping produces a substantial decrease in the non-linear gain coefficient, which can be attributed to a doping-induced decrease in the intraband relaxation time, and a small increase in the differential gain. The factors limiting the maximum measured modulation bandwidth of the p-doped devices (30 GHz) are analyzed and discussed.

: http://publica.fraunhofer.de/documents/PX-9023.html