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Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers

Dämpfungsbegrenzte Modulationsbandbreite bis 40 GHz in undotierten In(0.35)Ga(0.65)As-GaAs Mehrfach-Quantenfilm-Lasern mit kurzem Resonator


IEEE Photonics Technology Letters 8 (1996), No.5, pp.608-610
ISSN: 1041-1135
Journal Article
Fraunhofer IAF ()
diode laser; InGaAs/GaAs; Laserdiode; Mehrfach-Quantenfilm; modulation bandwidth; Modulationsbandbreite; quantum wells

We demonstrate record direct modulation bandwidth from MBE-grown In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 micron(exp 2) devices at a bias current of 155 mA, which is the damping limit for this structure. We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of ~1.1 micron for these devices.