Dämpfungsbegrenzte Modulationsbandbreite bis 40 GHz in undotierten In(0.35)Ga(0.65)As-GaAs Mehrfach-Quantenfilm-Lasern mit kurzem Resonator

: Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.

Abstract
We demonstrate record direct modulation bandwidth from MBE-grown In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 micron(exp 2) devices at a bias current of 155 mA, which is the damping limit for this structure. We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of ~1.1 micron for these devices.