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Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy.

Untersuchung von Implantationsschäden in mit niederen Dosen Si-implantiertem GaAs mittels Ramanspektroskopie
 
: Wagner, J.

:

Applied Physics Letters 52 (1988), No.14, pp.1158-1160 : Abb.,Lit.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
English
Journal Article
Fraunhofer IAF ()
GaAs; Implantationsschaden; Ramanstreuung; Si(implantiert)

Abstract
Allowed and forbidden first-order as well as resonant second-order Raman scattering has been used to study implantation damage in low-dose (5x10 E11-1x10 E13 cm-2) 29Si+-implanted GaAs. Symmetry forbidden scattering by longitudinal optical (LO) phonons and allowed 2LO scattering were found to be most sensitive to lattice damage for the range of implantation doses given above. The intensity ratio of the 2LO peak to the forbidden LO phonon line measures variations in the implantation dose with an accuracy better than +-7% for an average dose of 2x10 E12 cm-2. The potential of spatially resolved Raman spectroscopy for the assessment of homogeneity in as-implanted GaAs wafers has been demonstrated. (IAF)

: http://publica.fraunhofer.de/documents/PX-8919.html