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  4. Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.
 
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1991
Journal Article
Title

Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.

Other Title
Kristallfeld-Aufspaltungen von Er3+ -4f11- in Molekularstrahl-gezüchtetem ErAs/GaAs
Abstract
A detailed infrared-spectroscopic study is presented of the intra 4f-shell transitions 4I sub 15/2-4I sub 13/2 of Er high 3+ (4f high 11), at lambda = 1.54 mym, in single-crystal ErAs films deposited on GaAs substrates by molecular beam epitaxy. Using Fourier-transform infrared absorption spectroscopy crystal-field splittings of both the 4I sub 15/2 ground state and the first electronically excited state 4I sub 13/2 are observed. Good agreement is found between the measured transition energies and those calculated for 4f high 11 ions in a crystal field of cubic (O sub H) symmetry, as expected for the Er lattice site in unstrained ErAs. From the infrared absorption data, the relevant cubic fourth and sixth-order crystal field parameters are determined spectroscopically for the first time.
Author(s)
Schneider, J.
Müller, Harald D.
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Thonke, K.
Dörnen, A.
Ralston, J.D.
Journal
Applied Physics Letters  
DOI
10.1063/1.105569
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • crystal-field splitting

  • ErAs

  • GaAs

  • infrared spectroscopy

  • Infrarot-Spektroskopie

  • Kristallfeld-Aufspaltung

  • molecular beam epitaxy

  • Molekularstrahlepitaxie

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