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Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.

Kristallfeld-Aufspaltungen von Er3+ -4f11- in Molekularstrahl-gezüchtetem ErAs/GaAs


Applied Physics Letters 59 (1991), No.1, pp.34-36 : Abb.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
crystal-field splitting; ErAs; GaAs; infrared spectroscopy; Infrarot-Spektroskopie; Kristallfeld-Aufspaltung; molecular beam epitaxy; Molekularstrahlepitaxie

A detailed infrared-spectroscopic study is presented of the intra 4f-shell transitions 4I sub 15/2-4I sub 13/2 of Er high 3+ (4f high 11), at lambda = 1.54 mym, in single-crystal ErAs films deposited on GaAs substrates by molecular beam epitaxy. Using Fourier-transform infrared absorption spectroscopy crystal-field splittings of both the 4I sub 15/2 ground state and the first electronically excited state 4I sub 13/2 are observed. Good agreement is found between the measured transition energies and those calculated for 4f high 11 ions in a crystal field of cubic (O sub H) symmetry, as expected for the Er lattice site in unstrained ErAs. From the infrared absorption data, the relevant cubic fourth and sixth-order crystal field parameters are determined spectroscopically for the first time.