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Coupled simulation of gas flow and heat transfer in an RTP-system with rotating wafer

Gekoppelte Simulation von Konvektion und Wärmeübertragung in einem Schnellheizsystem mit rotierender Siliciumscheibe
: Poscher, S.; Theiler, T.


Materials Science in Semiconductor Processing 1 (1998), pp.201-205
ISSN: 1369-8001
Journal Article
Fraunhofer IIS B ( IISB) ()
CFD; gas-flow; heat-transfer; RTP; semiconductor; simulation

In this study the concept of a lamp heated RTP-system with rotating wafer is considered. Using the Fluid-Flow-Simulation software Phoenics-CVD, we investigated the cooling of the wafer by a process gas flow which is injected at room temperature into the hot process chamber through an inlet pipe in the side wall. In a full 3d-simulation of the gas flow and of the heat transfer in the gas and in the wafer the Navier-Stokes equations and the energy equation are solved. The radiative power consumption and the energy loss of the wafer have been modeled by the Stefan-Boltzmann law. Simulations without wafer rotation show a strong drop in the temperature distribution at the wafer near the inlet pipe. In contrast to this, simulations with rotation show an axisymmetric temperature distribution with a considerably smaller temperature gradient over the wafer. Comparisons with oxidation experiments showed good agreement with the simulation results.