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Coupled cyclotron resonance transitions of bilayer 2DEG systems in GaAs

Gekoppelte Zyklotronresonanz-Übergänge von doppelten zweidimensionalen Elektronengassystemen in GaAs
: Hu, C.M.; Batke, E.; Shen, S.C.; Köhler, K.; Ganser, P.


Physica. B 256-258 (1998), pp.494-498 : Ill., Lit.
ISSN: 0921-4526
Journal Article
Fraunhofer IAF ()
bilayer electron system; electrical property; electron cyclotron resonance; electron-electron interaction; elektrische Eigenschaft; far-infrared spectroscopy; heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductor

Electron cyclotron resonances in bilayer quasi two-dimensional electron systems are examined in the extreme magnetic quantum limit. The variation of the resonance frequencies with electron density strongly depends on the thickness of the barrier between the two layers. In samples with sufficiently thin barriers there is strong evidence for the presence of interlayer Coulomb coupling and influences of wavefunction delocalization effects.