1999
Conference Paper
Title

A coplanar W-band power amplifier MMIC using dual-gate HEMTs

Other Title
Eine auf dual-gate HEMTs basierende monolithisch integrierte koplanare W-Band Leistungsverstärkerschaltung
Abstract
A two-stage monolithic W-band power amplifier has been developed, using 0.15 mu AlGa.As/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only 1 x2 mm2.
Author(s)
Tessmann, Axel  
Haydl, W.H.
Neumann, M.
Kudszus, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hülsmann, A.
Mainwork
Conference
DOI
Language
English
Keyword(s)