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A coplanar W-band power amplifier MMIC using dual-gate HEMTs

Eine auf dual-gate HEMTs basierende monolithisch integrierte koplanare W-Band Leistungsverstärkerschaltung

: Tessmann, A.; Haydl, W.H.; Neumann, M.; Kudszus, S.; Hülsmann, A.

DOI: 10.1109/EUMA.1999.338319

	Microwave Engineering Europe: 29th European Microwave Conference 1999. Conference proceedings. Vol.1 London: Miller Freeman, 1999 ISBN: 0-86213-152-9 pp.246ff
	European Microwave Conference (EuMC) <29, 1999, München> European Microwave Week (MIOP) <1999, München>

	English
	Conference Paper
	Fraunhofer IAF ()
	cascode; coplanar; dual-gate; Kaskade; koplanar; Leistungsverstärker; MMIC; MPA; W-band

Abstract
A two-stage monolithic W-band power amplifier has been developed, using 0.15 mu AlGa.As/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only 1 x2 mm2.

: http://publica.fraunhofer.de/documents/PX-8688.html