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1989
Journal Article
Titel
Contributions of atomic hydrogen to the low temperature removal of traps at silicon oxide-silicon interfaces.
Alternative
Rolle des atomaren Wasserstoffs beim Ausheilen von Grenzflächenzuständen an Silicium-Siliciumdioxidgrenzflächen bei niedrigen Temperaturen
Abstract
Silicon nitride/silicon oxide/silicon devices and aluminium/silicon nitride/silicon oxide/silicon devices were annealed at 450 degree C in forming gas. The different annealing behaviours provide experimental evidence that atomic hydrogen generated by the reaction of water and the gate metal is capable of diffusing through both dielectric layers and annihilating interfacial traps. Atomic hydrogen appears to play a dominant role in the annealing of interface traps of (large area) aluminium gate devices.