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Contamination reduction in low voltage e-beam microscopy for dimensional metrology

 
: Brünger, W.H.; Kleinschmidt, H.; Hassler-Grohne, W.; Bosse, H.

Owen, G. ; American Vacuum Society:
41st International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication 1997. Papers
Woodbury, NY: American Institut of Physics, 1997 (Journal of vacuum science and technology. B microelectronics and nanometers)
ISBN: 1-563-96768-5
pp.2181-2184
International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication <41, 1997, Dana Point/Calif.>
English
Conference Paper
Fraunhofer ISIT ()

Abstract
Contamination of structures to be analyzed in an electron microscope is a severe problem for dimensional metrology applications, especially for low voltage electron microscopy. Two methods for contamination reduction which do not use a temperature variation of the sample or its environment have been investigated in this article. First, injection of inert and reactive gases into the area of electron-beam impact to create a locally confined area of increased pressure which reduces the contamination growth by a factor of two. Second, prescanning the surroundings of the area is intended for metrology measurements. This method effectively immobilizes contaminants on the specimen surface if the delay time between immobilization and measurement is short enough (approximately 40 ms), to avoid the replenishment of contaminants. A combination of the two techniques is recommended for a damage free low voltage electron-beam metrology.

: http://publica.fraunhofer.de/documents/PX-8569.html