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Contactless resistivity mapping of semi-insulating substrates.

Kontaktfreie Widerstandstopographie semi-isolierender Substrate
 
: Jantz, W.; Stibal, R.

:

III-Vs Review 6 (1993), No.4, pp.38-39 : Abb.
ISSN: 0959-3527
ISSN: 0961-1290
English
Journal Article
Fraunhofer IAF ()
GaAs; InP; resistivity; spezifischer Widerstand; Topographie; topography

Abstract
High substrate resistivity is an important competitive asset of Ill-V semiconductors. It enhances the performance of ultrafast microelectronic and optoelectronic circuits. For a thorough on-line wafer quality control, a superior measurement system is required to evaluate resistivity fast, nondestructively and with high lateral resolution.

: http://publica.fraunhofer.de/documents/PX-8559.html