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Computer-aided resist modelling with extended xmas in X-ray lithography

: Chlebek, J.; Huber, H.-L.; Oertel, H.; Dammel, R.; Lingnau, J.; Theis, J.; Weiß, M.

Microelectronic engineering (1989), No.9, pp.629-633
ISSN: 0167-9317
Journal Article
Fraunhofer ISIT ()

There is an increasing need for computer-aided lithography simulation and modelling in IC manufacture. Software programs are well-established tools in simulating the problems affecting line-edge profiles for different exposure arrangements and development processes. The simulation program XMAS (X-Ray Lithography Modelling and Simulation) is designed to evaluate a large variety of exposure and development situations in X-ray lithography. After the imaging procedure, a simulation of the development process can be performed resulting in two or three-dimensional resist profiles at various stages in the process. Results are presented concerning the development behaviour of standard and experimental positive three-component-system (3CS) resists as well as experimental negative tone resists. The influence of secondary electrons backscattered from different substrate layers is investigated. The algorithm for three-dimensional development based on a ray-tracing formalism is described.