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A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates

Ein vollständiger GaAs HEMT Einchip-Empfänger für 40 Gbit/s Daten Raten

: Lang, M.; Wang, Z.-G.; Thiede, A.; Lienhart, H.; Jakobus, T.; Bronner, W.; Hornung, J.; Hülsmann, A.

DOI: 10.1109/GAAS.1998.722624

	IEEE Electron Devices Society; IEEE Microwave Theory and Techniques Society; IEEE Solid-State Circuits Society: 20th GaAs IC Symposium 1998. Technical digest Piscataway, NJ: IEEE, 1998 ISBN: 0-7803-5049-9 pp.55-58 : Ill
	GaAs IC Symposium <20, 1998, Atlanta/Ga.>

	English
	Conference Paper
	Fraunhofer IAF ()
	data receiver; Datenempfänger; GaAs; HEMT

Abstract
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and convert it into a four bit parallel data signal. The results presented here have been measured on wafer.