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Competition between tunneling and exciton formation for photoexcited carriers in asymmetric double quantum wells.

Tunneln und Exzitonenformation als konkurrierende Prozesse für photoangeregte Ladungsträger in asymmetrischen Doppel-Quantum-Wells
: Kuhl, J.; Strobel, R.; Eccleston, R.; Köhler, K.

Optical Society of America -OSA-, Washington/D.C.:
OSA Proceedings on Picosecond Electronics and Optoelectronics. Vol.9
Washington/D.C., 1991
pp.223-228 : Abb.,Lit.
Picosecond Electronics and Optoelectronics <1991, Salt Lake City/Utah>
Conference Paper
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; picosecond optoelectronic; quantum wells

The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross- correlation technique, a bi-molecular formation coefficient of 6x10highminus12qcm/ps is determined. The electron and hole tunneling times are also simultaneously obtained.