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Competition between tunneling and exciton formation for photoexcited carriers in asymmetric double quantum wells.

Tunneln und Exzitonenformation als konkurrierende Prozesse für photoangeregte Ladungsträger in asymmetrischen Doppel-Quantum-Wells

: Kuhl, J.; Strobel, R.; Eccleston, R.; Köhler, K.

	Optical Society of America -OSA-, Washington/D.C.: OSA Proceedings on Picosecond Electronics and Optoelectronics. Vol.9 Washington/D.C., 1991 pp.223-228 : Abb.,Lit.
	Picosecond Electronics and Optoelectronics <1991, Salt Lake City/Utah>

	English
	Conference Paper
	Fraunhofer IAF ()
	heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; picosecond optoelectronic; quantum wells

Abstract
The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross- correlation technique, a bi-molecular formation coefficient of 6x10highminus12qcm/ps is determined. The electron and hole tunneling times are also simultaneously obtained.

: http://publica.fraunhofer.de/documents/PX-8251.html