1992
Conference Paper
Title

Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.

Other Title
Vergleich zwischen GaAs und In0.35Ga0.65As Hochgeschwindigkeit-MQW-Laserdioden mit kompakter vertikaler Struktur für monolithische Integration
Abstract
A detailed comparison is presented between vertically-compact high-speed GaAs and Insub0.35Gasub0.65As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.
Author(s)
Ralston, J.D.
Weisser, S.
Esquivias, I.
Gallagher, D.F.G.
Tasker, P.J.
Rosenzweig, Josef  
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Conference
DOI
Language
English
Keyword(s)