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  4. Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
 
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1992
Conference Paper
Title

Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.

Other Title
Vergleich von ultraschnellen 30 GHz undotierten und p-dotierten In0.35Ga0.65As/GaAs-MQW-Lasern
Author(s)
Schönfelder, A.
Weisser, S.
Ralston, J.D.
Larkins, E.C.
Esquivias, I.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tasker, P.J.
Rosenzweig, Josef  
Mainwork
IEEE Lasers and Electro-Optics Society 1992 Annual Meeting. Post deadline papers  
Conference
IEEE Lasers and Electro-Optics Society (Annual Meeting) 1992  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Dämpfungsrate

  • damping rate

  • Halbleiterlaserdiode

  • high-frequency direct modulation

  • Hochfrequenzdirektmodulation

  • p-doping

  • p-Dotierung

  • relative intensity noise

  • relatives Intensitätsrauschen

  • semiconductor laser

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