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Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.

Vergleich von ultraschnellen 30 GHz undotierten und p-dotierten In0.35Ga0.65As/GaAs-MQW-Lasern
 
: Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J.

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Lasers and Electro-Optics Society 1992 Annual Meeting. Post deadline papers
New York/N.Y., 1992
2 pp. : Abb.
IEEE Lasers and Electro-Optics Society (Annual Meeting) <5, 1992, Boston/Mass.>
English
Conference Paper
Fraunhofer IAF ()
Dämpfungsrate; damping rate; Halbleiterlaserdiode; high-frequency direct modulation; Hochfrequenzdirektmodulation; p-doping; p-Dotierung; relative intensity noise; relatives Intensitätsrauschen; semiconductor laser

: http://publica.fraunhofer.de/documents/PX-8232.html